Defect analysis of 1 MeV electron irradiated InGaAsP and InGaAs single junction solar cell
Xiaofan Zhao
Xinjiang Technical Institute of Physics & Chemistry, Urumuqi, China

1 MeV electron irradiation induced displacement damage defects in InGaAsP and InGaAs single junction solar cell structure by DLTS. The result shows that the degradation of cell performance is caused by the irradiation induced displacement damage defects which introduce new defect levels in the material band-gap and increase the capture cross-section of the native defects.