Characterization of the Metallization Induced Recombination Losses in Industrial Silicon Solar Cells 
Mengjie LI1, Nafis Iqbal1, Kristopher Davis1, 2
1Department of Materials Science and Engineering, , University of Central Florida, Orlando , FL, United States
/2Florida Solar Energy Center, University of Central Florida, Cocoa, FL, United States

Metallization induced recombination losses have
always been a limiting factor in the performance of industrial
high efficiency silicon solar cells. However, the dark saturation
current density at metal-Si interfaces (metal J0) cannot be easily
measured. In this work, we present an easy-to-implement, but
rigorous method to determine the metal J0 of a silicon solar cell
contact. Additionally, this work builds onto the previous
research results, investigating the dimension-dependent metal
J0.