|The effect of pulsewidth on preparing CuIn1-xGaxSe2 thin film via pulse laser deposition|
|Shih-Chen Chen2, Kaung-Hsiung Wu2, Takayoshi Kobayashi2, Hao-Chung Kuo1
1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan
/2Department of Electrophysics, National Chiao-Tung University, Hsinchu, Taiwan
We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.