Modelling and Performance analysis of InGaN/GaN based Multiple Quantum Well solar cells
Gaurav Siddharth, Vivek Garg, Brajendra S. Sengar, Amitesh Kumar, Shaibal Mukherjee
Indian Institute of Technology Indore, Indore, India

In this work, an analytical model is proposed as a convenient tool for the performance analysis of multiple quantum well (MQW) solar cells. Significantly, the American Society for Testing and Materials (ASTM) standards data sheets and spectral irradiance are utilized for obtaining photon flux instead of black body radiation formula. Further, the performance parameters are evaluated using the obtained photon flux density. The MQW solar cell is analyzed based on the different composition of the indium in InGaN material of the intrinsic region (active region), the operating temperature and the number of quantum well used in MQWSC.  Results suggest that Jsc increases by ~42% whereas Voc decreases by ~17%, leading to overall decrement in the efficiency by ~31% as the indium composition increases from 0.15 to 0.25. The variation of efficiency with the temperature is also studied. The efficiency of the MQW solar cell decreases by ~4% as the temperature increases from 250 to 350 K.  Further, the analysis is done on the basis of the number of quantum well variations, and it observed that the efficiency increases till the point where the increased absorption outweighs the increased recombination.

Area: Sub-Area 1.2: Quantum-well, Wire, and Dot-Architectured Devices