|Numerical simulation of CIGS solar cells with Zn(O,S) or (Cd,Zn)S buffers and (Zn,Mg)O as high-resistive layer|
|Giovanna Sozzi1, Simone Di Napoli1, Matteo Enna1, Roberto Menozzi1, Dimitrios Hariskos2, Wolfram Witte2
1Department of Engineering and Architecture, University of Parma, Parma, Italy
/2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgard, Germany
The commonly used CdS/i-ZnO buffer system in Cu(In,Ga)Se2 (CIGS) thin-film solar cells is substituted either by Zn(O,S)/(Zn,Mg)O or (Cd,Zn)S/(Zn,Mg)O and investigated by electro-optical simulations. We considered different (Zn,Mg)O compositions and thicknesses to find the combinations giving the highest power conversion efficiencies. Similarly, we examine the effect of variations of the Zn mole fraction in (Cd,Zn)S for the (Cd,Zn)S/Zn0.83Mg0.17O system on the CIGS solar cell’s figures of merit.