|A Novel Architecture for Photovoltaic Devices: Field-effect Solar Cells Using Screening-engineered Nanoelectrodes for Silicon and Earth Abundant Cuprous Oxide|
|Oscar Vazquez1,2, William Regan1,2, Onur Ergen1,2, Will Gannett1,2, Steven Byrnes1,2, Feng Wang1,2, Alex Zettl1,2
1Department of Physcis, University of California, Berkeley, Berkeley, CA, United States
/2Materials Science Division, Lawrence Berkeley National Laboratory, CA, United States
We present a novel photovoltaic cell architecture based on the field effect that controls carrier concentration in semiconductors using screening-engineered nanostructured electrodes. The device operates in inversion mode with a top gate that forms a p-n junction and with nanostructured electrodes that collect the photocurrent across the junction. This architecture does not require any doping process or a heterojunction, opening an alternative path to fabricate cells on hard-to-dope materials such as oxides or phosphides. As a proof of concept, we present a field effect solar cell made of Si. To demonstrate the potential of this configuration for alternative materials, we also present a field-effect solar cell made of cuprous oxide, which has a favorable band gap but that is difficult to dope. We show that the behavior of the devices is controlled by the gate voltage that forms an inversion layer and hence a rectifying p-n junction.