The Luminescent Down Shifting Effect of Single-Junction GaAs Solar Cell with Perovskite Quantum Dots
Yu-Yun Cho1, Yu-Ming Huang1, Shun-Chieh Hsu1, Sheng-Feng Kao2, Hsiang-Yun Shih1, Ting-Yu Lee1, Yin-Hsin Liu3, Teng-Ming Chen3, Hao-Chung Kuo4, Chien-Chung Lin1
1Institute of Photonic System, National Chiao-Tung University, Tainan, Taiwan
/2Institute of Imaging and Biomedical Photonics, National Chiao-Tung University, Tainan, Taiwan
/3Department of Applied Chemistry, National Chiao-Tung University, Hsinchu, Taiwan
/4Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan

In this work, we demonstrate the Luminescent Down Shifting (LDS) effect of the single-junction GaAs solar cell with 530 nm Perovskite quantum dots with and without bake treatment. The best one result show that Jsc from 22.22 mA/cm2 to 24.21 mA/cm2 and the efficiency from 17.70% to 19.52% as high as 8.94% and 10.27% enhancement. The enhancement includes antireflection and LDs effect, via our calculated the increase Jsc from LDS effect was 31.65%. Further storage lifetime test shows great reliability from these devices can be expected.

Area: Sub-Area 1.3: Advanced Light Management and Spectral Shaping