NIEL Dose Analysis on triple and single junction InGaP/GaAs/Ge solar cells irradiated with electrons, protons and neutrons
Roberta Campesato1, Carsten Baur6, Mario Carta5, Mariacristina Casale1, Davide Chiesa2,3, Massimo Gervasi2,3, Enos Gombia4, Erminio Greco1, Aldo Kingma4, Massimiliano Nastasi2,3, Ezio Previtali2, Pier Giorgio Rancoita2, Davide Rozza2,3, Emilio Santoro5, Mauro Tacconi2,3
1CESI S.p.A., Milan, Italy
/2INFN Milano-Bicocca, Milan, Italy
/3Univ. Milano Bicocca, Milan, Italy
/4IMEM-CNR Institute, Milan, Italy
/6ESA/ ESTEC, Noordwijk, Netherlands

Triple junction (InGaP/GaAs/Ge) and single junction (SJ) solar cells were irradiated with electrons, protons and neutrons. The degradation of remaining factors was analyzed as function of the induced Displacement Damage Dose (DDD) calculated by means of the SR-NIEL (Non Ionizing Energy Loss) approach. In particular, the aim of this work is to analyze the variation of the solar cells remaining factors due to neutron irradiation with respect to those previously obtained with electrons and protons. The current analysis confirms that the degradation of the Pmax electrical parameter is related by means of the usual semi-empirical expression to the displacement dose, independently of type of incoming particle. Isc and Voc parameters were also measured as function of the displacement damage dose.