|Evaluation of asymmetric tunneling-assisted structure for InGaAs/GaAsP MQWs solar cell|
|ShaoJun Ma1, YunPeng Wang2, Hassanet Sodabanlu2, Kentaroh Watanabe2, Masakazu Sugiyama1, Yoshiaki Nakano1,2
1Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, Tokyo, Japan
/2Research Center for Advanced Science and Technology, the University of Tokyo, Tokyo, Japan
In the multiple quantum wells (MQWs) system, deep well supplies wide absorption range, but the large band offset would increase the carrier thermionic escape time exponentially. We utilized asymmetric tunneling-assisted structure in InGaAs/GaAsP strain-balanced MQWs to accelerate the carrier collection. The quantitative model of carrier collection time from this novel structure has been built and the collection time has been calculated to be 31% compared with conventional multiple quantum wells. The solar cell with designed tunneling-assisted structure has been fabricated and the external quantum efficiency of it has been compared with conventional MQWs structure. The temperature dependence has also been investigated.