|Opportunities for High Efficiency Monochromatic Photovoltaic Power Conversion at 1310 nm|
|Daixi Xia1, Meghan N. Beattie1, Man Chun Tam3, Matthew M. Wilkins1,2, Christopher E. Valdivia1,2, Zbigniew R. Wasilewski3,4, Karin Hinzer1,2, Jacob J. Krich1,2
1Department of Physics, University of Ottawa, Ottawa, ON, Canada
/2School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, Canada
/3Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, Canada
/4Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada
We show the high efficiency and voltage possible for a monochromatic multijunction photovoltaic device operating at the telecom wavelength 1310 nm. We use InAlGaAs lattice matched to InP and characterize our single-junction test structure, which we show has a bandgap of 0.876 eV. We use an extended detailed balance model to predict the efficiency and voltage of a series-connected multijunction device built from the same material, and show its advantages compared to a single-junction design. We show that a series-connected 20-junction device with In0.532Al0.097Ga0.371As can achieve a maximum power conversion efficiency over 69% in the radiative limit, at an input intensity of 5.6×105 W/m2. We also show that the device voltage at the maximum power point increases linearly with the number of junctions, with a slope larger than the single-junction voltage at maximum power point. Such behaviors of voltage and efficiency make a promising future for high-efficiency, high-voltage multijunction photonic power converter near 1310nm.