|Influence of the Schottky barrier height on the silicon solar cells|
|Sébastien Thibert1,2, Johann Jourdan1, Bernard Bechevet1, Jeremy Faissat1, Didier Chaussy2, Nadège Reverdy-Bruas2, Davide Beneventi2
1MPO-Energy, Averton, France
/2LGP2 Grenoble INP-PAGORA, Saint-Martin-d'Hères, France
With the recent introduction of ion implantation in the photovoltaic industry, it is now easier to carefully tailor the emitter doping profile. However the metallization layout should be optimized in the same time, as they are closely linked via the metal/silicon contact resistivity. In this work, an advanced co-optimization procedure allows finding out the influence of the Schottky barrier height on the metal grid design and the optimal doping profile. The theoretical electrical properties of a 2 x 2 cm² ideal silicon solar cell are also computed for each optimal combination. According to this work, the maximal achievable efficiency drops from 26.2 % to 25.3 % if the Schottky barrier height is increased from 0.5 eV to 0.9 eV.