Investigation of the Properties of Silicon-Oxides (SiOx:H) and their Impact as Window Layers on Silicon Heterojunction Solar Cells Device Performance
Brahim Aïssa1, Amir A. Abdallah1, Maulid M. Kivambe1, Yahya Zakaria1, Nouar Tabet1, Jean Cattin2, Jan Haschke2, Mathieu Boccard2, Christophe Ballif2
1Qatar Environment and Energy Research Institute, Hamad bin Khalifa University, Qatar Foundation, P.O. Box 34110, Doha, Qatar
/2Photovoltaics and Thin-Film Electronics Laboratory (PV-lab), Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne, Rue de la Maladière 71B, CH-2002, Neuchâtel, Switzerland

We report on the development of hydrogenated n-type amorphous and microcrystalline silicon oxides ((n)-SiOx:H and (n) µc-SiOx:H, respectively) by plasma enhanced chemical vapor deposition, and their successful integration as n-window layers for silicon heterojunction (SHJ) solar cells devices. Comparatively to (n) a-SiOx:H, our results show that (n) µc-SiOx:H leads to an improvement of the photovoltaic performance, including the short-circuit current density –due most probably to a reduction of the parasitic absorption-, the open circuit voltage, and the Fill Factor. The different temperature coefficients of the SHJ cells were also investigated towards improving their performance in hot desert conditions.

Area: Sub-Area 4.4: Passivated Contacts, Carrier Selective Contacts and Hetero-Junction Structures