|Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device|
|Brahim Aïssa1, Amir A. Abdallah1, Atef Zekri1, Yahya Zakaria1, Maulid M. Kivambe1, Said Mansour2, Jean Cattin2, Jan Haschke2, Mathieu Boccard2, Christophe Ballif
1Qatar Environment and Energy Research Institute, Hamad bin Khalifa University, Qatar Foundation, P.O. Box 34110, Doha, Qatar
/2Photovoltaics and Thin-Film Electronics Laboratory (PV-lab), Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne, Rue de la Maladière 71B, CH-2002, Neuchâtel, Switzerland
We report on the development of hydrogenated n-type amorphous and microcrystalline silicon oxides ((n)-SiOx:H and (n) μc-SiOx:H, respectively) by PECVD, and their successful integration as n-window layers for silicon heterojunction (SHJ) solar cells devices. These Si-oxides were investigated by means of microRaman spectroscopy, high-resolution TEM and time of flight SIMS. Comparatively to (n) μc-SiOx:H, the (n) a-SiOx:H leads globally to an improvement of the photovoltaic performance, except for open circuit voltage which was higher with the microcrystalline oxide –due probably to a reduction of the parasitic absorption-. The associated temperature coefficients were also investigated towards improving their performance in hot desert conditions.