|Thin Al2O3 passivation for hetero junction Si solar cell|
|Sangpyeong Kim, Andre Augusto, Stuart Bowden, Christiana Honsberg
Arizona State University, Tempe, AZ, United States
We study the potential of using Al2O3 as a more transparent passivation layer for silicon heterojunction solar cell. We have optimized the post-annealing process to activate the Al2O3 layer. With 10nm Al2O3 layer the effective minority-carrier lifetimes surpassed the 3 ms and implied open-circuit voltages were over 700 mV. The thick Al2O3 layers prevents the carrier transport to the metal contacts. The first results on very thin layers of Al2O3 show severe degradation both in lifetime and voltage.
Area: Sub-Area 4.4: Passivated Contacts, Carrier Selective Contacts and Hetero-Junction Structures